DocumentCode :
2601508
Title :
Roles of Quantum Nanostructures on the Evolution and Future Advances of Electronic and Photonic Devices
Author :
Sakaki, Hiroyuki
Author_Institution :
Toyota Technol. Inst., Nagoya
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
9
Lastpage :
16
Abstract :
Advances in semiconductor nanostructures are reviewed to clarify their importance in electronics and photonics. First 10 nm-scale FET channels, quantum wells, and related systems are discussed to show how the quantum confinement of electrons in such structures is controlled to maximize performances of FETs, lasers, and other core devices and to create quantum devices, such as resonant tunneling diodes and intersubband infrared devices. We then examine potentials of quantum dots and wires, by which electronic motions are further restricted to provide various new properties and functions.
Keywords :
MOSFET; high electron mobility transistors; nanotechnology; semiconductor quantum dots; semiconductor quantum wells; semiconductor quantum wires; semiconductor superlattices; single electron transistors; MOSFET; heterostructure FET; intersubband infrared devices; quantum confinement; quantum dots; quantum nanostructures; quantum wells; quantum wires; resonant tunneling diodes; semiconductor nanostructures; single electron transistors; Control systems; Electrons; FETs; Optical control; Potential well; Quantum dot lasers; Quantum well lasers; Resonant tunneling devices; Semiconductor lasers; Semiconductor nanostructures;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4418851
Filename :
4418851
Link To Document :
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