• DocumentCode
    2601586
  • Title

    FBC´s Potential of 6F2 Single Cell Operation in Multi-Gbit Memories Confirmed by a Newly Developed Method for Measuring Signal Sense Margin

  • Author

    Matsuoka, Fumiyoshi ; Ohsawa, Takashi ; Higashi, Tomoki ; Furuhashi, Hironobu ; Hatsuda, Kosuke ; Fujita, Katsuyuki ; Fukuda, Ryo ; Ikumi, Nobuyuki ; Shino, Tomoaki ; Minami, Yoshihiro ; Nakajima, Hiroomi ; Hamamoto, Takeshi ; Nitayama, Akihiro ; Watanabe

  • Author_Institution
    Toshiba Corp., Yokohama
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    39
  • Lastpage
    42
  • Abstract
    A 6F2 single cell (one-cell-per-bit) operation of the floating body RAM (FBRAM) is successfully demonstrated for the first time with more than 60% yield of 16Mbit area in a wafer. The signal sense margin (SSM) at actual read conditions is found to well back up the functional results. The parasitic resistance in the source and drain formed under the FBC´s spacers can be optimized for making the SSM as large as 8muA at plusmn 4.5sigma without sacrificing the retention time.
  • Keywords
    integrated circuit measurement; integrated circuit yield; random-access storage; 6F2 single cell operation; floating body RAM; parasitic resistance; retention time; signal sense margin; Area measurement; Current measurement; Design optimization; Immune system; Microelectronics; Random access memory; Read-write memory; Testing; Time measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4418857
  • Filename
    4418857
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2601586