Author :
Matsuoka, Fumiyoshi ; Ohsawa, Takashi ; Higashi, Tomoki ; Furuhashi, Hironobu ; Hatsuda, Kosuke ; Fujita, Katsuyuki ; Fukuda, Ryo ; Ikumi, Nobuyuki ; Shino, Tomoaki ; Minami, Yoshihiro ; Nakajima, Hiroomi ; Hamamoto, Takeshi ; Nitayama, Akihiro ; Watanabe
Abstract :
A 6F2 single cell (one-cell-per-bit) operation of the floating body RAM (FBRAM) is successfully demonstrated for the first time with more than 60% yield of 16Mbit area in a wafer. The signal sense margin (SSM) at actual read conditions is found to well back up the functional results. The parasitic resistance in the source and drain formed under the FBC´s spacers can be optimized for making the SSM as large as 8muA at plusmn 4.5sigma without sacrificing the retention time.
Keywords :
integrated circuit measurement; integrated circuit yield; random-access storage; 6F2 single cell operation; floating body RAM; parasitic resistance; retention time; signal sense margin; Area measurement; Current measurement; Design optimization; Immune system; Microelectronics; Random access memory; Read-write memory; Testing; Time measurement; Voltage;
