• DocumentCode
    2601599
  • Title

    Theory of the Failure of Semiconductor Contacts by Electromigration

  • Author

    Oliver, C.B. ; Bower, D.E.

  • Author_Institution
    Mullard Ltd. Southampton, England
  • fYear
    1970
  • fDate
    25659
  • Firstpage
    116
  • Lastpage
    120
  • Abstract
    A theory is presented which predicts the time required for a metal film conductor on a silicon substrate to fail as a result of electromigration. The failure time depends inversely on the current density, J, and on the temperature gradient. For a self heated conductor this may be simplified to a dependence on J¿3. Experimental results for aluminium films show a failure time of 125 hours at 106 A cm¿2 and 200°C in agreement with theory.
  • Keywords
    Aluminum; Conductive films; Conductors; Current density; Electromigration; Electron mobility; Iron; Semiconductor films; Silicon; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1970. 8th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1970.362445
  • Filename
    4207811
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2601599