DocumentCode :
2601625
Title :
Current Crowding Effects at Aluminun-Silicon Contacts
Author :
Prokop, G.S. ; Ting, C.Y. ; Joseph, R.R.
Author_Institution :
IBM Components Division, East Fishkill Facility, Hopewell Junption, New York 12533
fYear :
1970
fDate :
25659
Firstpage :
121
Lastpage :
126
Abstract :
The magnitude of current crowding and its effects on failure mechanisms at aluminum-silicon contacts have been studied by using an enlarged contact. Current was found to decrease exponentially with distance from the leading edge of the contact. Joule heating in the contact when stressed at high currents caused diffusion of silicon into the aluminum metallization. Accelerated testing at low currents to minimize this effect resulted in diffusion barrier type failures.
Keywords :
Aluminum; Contact resistance; Electromigration; Failure analysis; Heating; Life estimation; Proximity effect; Resistors; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1970. 8th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1970.362446
Filename :
4207812
Link To Document :
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