DocumentCode :
2601631
Title :
CMOS Devices - Metal Gate & High-K Gate Dielectric
Author :
Yoon, Jong Shik ; Thean, Aaron
Author_Institution :
Samsung Electronics
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
47
Lastpage :
47
Keywords :
CMOS technology; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Paper technology; Physics; Semiconductor materials; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4418859
Filename :
4418859
Link To Document :
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