Negative resistance in the output characteristics of SOI MOSFETs

Author

McDaid, L.J. ; Hall, S. ; Eccleston, W. ; Alderman, J.C.

Author_Institution

Dept. of Electr. Eng. & Electron., Liverpool Univ., UK

fYear

1989

fDate

3-5 Oct 1989

Firstpage

33

Lastpage

34

Abstract

Summary form only given. The output characteristics (I_DS vs. V_DS) of thin-film SOI MOSFETs show a decrease in drain current for increasing drain-source voltage at high power densities. In addition, the pinch-off point is shifted for small channel length, an effect inconsistent with theory due to the suppression of the body effect in these transistors. In an investigation of these phenomena it was found that both the negative resistance and the movement of the pinch-off point arise from a degradation of mobility caused by local heating due to power dissipation in the channel. This is a result of the poor thermal conductivity of the buried oxide; a worst case is that of a thin-film transistor on a thick buried insulator

Keywords

carrier mobility; insulated gate field effect transistors; negative resistance; semiconductor device testing; semiconductor-insulator boundaries; thin film transistors; I-V characteristics; buried oxide; channel length; drain current; drain-source voltage; high power densities; local heating; mobility degradation; negative resistance; output characteristics; pinch-off point; power dissipation; thermal conductivity; thin-film SOI MOSFETs; Circuit stability; Circuit synthesis; Electric resistance; Immune system; Intrusion detection; MOSFETs; Temperature; Thermal conductivity; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1989., 1989 IEEE

Conference_Location

Stateline, NV

Type

conf

DOI

10.1109/SOI.1989.69752

Filename

69752