A NAND-type Flash Memory Using Impact Ionization Generated Substrate Hot Electron Programming (≫20MB/sec) and Hot Hole Erasing

Author

Wu, Jau-Yi ; Kuo, Ming-Chang ; Hsu, Tzu-Hsuan ; Chen, Kuan-Fu ; Chen, Yin-Jen ; Lai, Erh-Kun ; Lee, Ming-Hsiu ; Hsieh, Kuang-Yeu ; Liu, Rich ; Lu, Chih-Yuan

Author_Institution

Emerging Central Lab., Hsinchu

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

87

Lastpage

90

Abstract

A new method to program and erase NAND devices without using high voltage Fowler-Nordheim (FN) stressing is investigated. Impact Ionization generated substrate Hot Electron (IIHE) and Band to Band tunneling Hot Hole (BBHH) are proposed for SONOS-type NAND flash memory application. Both junctions are biased with the same voltage to perform double-side-charge-injection without lateral electrical field induced current. A novel divided bit line architecture is introduced to achieve this operation. Fast program and erase speed of < 100mus is achieved. Good 10 K cycling endurance and high temperature data retention are demonstrated. IIHE/BBHH for floating gate memory and body-tied FinFET-type SONOS are also demonstrated.

Keywords

MOSFET; NAND circuits; flash memories; hot carriers; impact ionisation; silicon compounds; NAND-type flash memory; Si-SiO₂-SiN-SiO₂-Si; band-to-band tunneling hot hole; body-tied FinFET-type SONOS; data retention; divided bit line architecture; double-side-charge-injection; floating gate memory; high voltage Fowler-Nordheim stressing; hot hole erasing; impact ionization generated substrate hot electron; Charge carrier processes; Electron traps; Electronic mail; Flash memory; Hot carriers; Impact ionization; Nonvolatile memory; Temperature; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4418870

Filename

4418870