Novel Carrier-Mobility Modeling with Interface States for MOSFETs with Highly Scaled Gate Oxide Based on First-Principles Calculations

Author

Ishihara, Takamitsu ; Matsushita, Daisuke ; Tatsumura, Kosuke ; Nakabayashi, Yukio ; Koga, Junji ; Kato, Koichi

Author_Institution

Toshiba Corp., Yokohama

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

101

Lastpage

104

Abstract

We have performed the mobility modeling with interface states by considering optical phonon scattering associated with polarization. We have shown, for the first time, that the inelastic optical phonon scattering reproduces well the experimental mobility-lowering component associated with interface states. We have also found that hydrogen-termination method does not improve the mobility degradation associated with interface states due to polarization of hydrogen. Suppression of interface states is essential to avoid the mobility degradation.

Keywords

MOSFET; carrier mobility; interface states; phonons; semiconductor device models; MOSFET; carrier-mobility modeling; interface states; mobility degradation; mobility-lowering component; optical phonon scattering; Degradation; Hydrogen; Interface states; Laboratories; Large scale integration; MOSFETs; Optical devices; Optical polarization; Optical scattering; Phonons;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4418874

Filename

4418874