On the experimental determination of channel back-scattering in nanoMOSFETs

Author

Zilli, M. ; Palestri, P. ; Esseni, D. ; Selmi, L.

Author_Institution

Univ. of Udine - IUNET, Udine

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

105

Lastpage

108

Abstract

By using accurate Multi-Subband-Monte-Carlo simulations of quasi-ballistic transport we carry out a detailed re-examination of the experimental extraction procedure for the ballistic-ratio BR=I_D/I_BAL in nanoMOSFETs. It is found that the ballistic-ratio extracted applying this procedure to the simulated drain current severely underestimates the BR extracted by directly compare the simulated I_D and I_BAL. This is mainly due to inaccurate determination of the temperature dependence of the inversion charge. It is suggested that this limitation of the extraction procedure may explain the apparent lack of improvement in the ballisticity with the geometrical scaling.

Keywords

MOSFET; backscatter; ballistic transport; electric current; nanoelectronics; ballistic-ratio extraction procedure; channel back-scattering determination; geometrical scaling; multisubband-Monte-Carlo simulations; nanoMOSFET; quasiballistic transport; simulated drain current; Current measurement; Electrons; Equations; MOSFET circuits; Scattering; Temperature dependence; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4418875

Filename

4418875