Title :
Equivalent Circuits Describing the Planar Devices Behavior Under Ionizing Radiations
Author :
Martinot, H. ; Esteve, D. ; Rey, G.
Author_Institution :
Laboratoire d´´Automatique et de ses Applications Spatiales du Centre National de la Recherche Scientifique, B. P. 4036 - 31 TOULOUSE France
Abstract :
The main features of the behavior of bipolar and MOS transistors under ionizing radiations are first briefly reminded and the physical origin of degradation is then analyzed by the authors. They propose a model in agreement with experiments. The results obtained are introduced in equivalent electrical models of planar devices in order to evaluate the reliability of complex circuits, if computer aided design is used.
Keywords :
Bipolar transistors; Cathodes; Current measurement; Degradation; Electrons; Equivalent circuits; Ionizing radiation; Photoconductivity; Space charge; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1970. 8th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1970.362468