DocumentCode :
2602089
Title :
Yield Problems in LSI Technology
Author :
Schwuttke, G.H.
Author_Institution :
IBM, East Fishkill Laboratory, Hopewell Junction, New York
fYear :
1970
fDate :
25659
Firstpage :
274
Lastpage :
280
Abstract :
The "batch conceptl" used in modern semiconductor device processing can lead to a degradation of silicon wafer-perfection during device fabrication. Such a degradation may result in low or zero yield of good devices around the periphery of the wafer. It is shown that peripheral yield loss can be avoided or minimized whenever temperature gradients arising during cooling of a "row of wafers" are eliminated.
Keywords :
Cooling; Furnaces; Laboratories; Large scale integration; Oxidation; Semiconductor devices; Silicon; Temperature; Thermal degradation; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1970. 8th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1970.362470
Filename :
4207836
Link To Document :
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