• DocumentCode
    2602089
  • Title

    Yield Problems in LSI Technology

  • Author

    Schwuttke, G.H.

  • Author_Institution
    IBM, East Fishkill Laboratory, Hopewell Junction, New York
  • fYear
    1970
  • fDate
    25659
  • Firstpage
    274
  • Lastpage
    280
  • Abstract
    The "batch conceptl" used in modern semiconductor device processing can lead to a degradation of silicon wafer-perfection during device fabrication. Such a degradation may result in low or zero yield of good devices around the periphery of the wafer. It is shown that peripheral yield loss can be avoided or minimized whenever temperature gradients arising during cooling of a "row of wafers" are eliminated.
  • Keywords
    Cooling; Furnaces; Laboratories; Large scale integration; Oxidation; Semiconductor devices; Silicon; Temperature; Thermal degradation; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1970. 8th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1970.362470
  • Filename
    4207836