DocumentCode
2602089
Title
Yield Problems in LSI Technology
Author
Schwuttke, G.H.
Author_Institution
IBM, East Fishkill Laboratory, Hopewell Junction, New York
fYear
1970
fDate
25659
Firstpage
274
Lastpage
280
Abstract
The "batch conceptl" used in modern semiconductor device processing can lead to a degradation of silicon wafer-perfection during device fabrication. Such a degradation may result in low or zero yield of good devices around the periphery of the wafer. It is shown that peripheral yield loss can be avoided or minimized whenever temperature gradients arising during cooling of a "row of wafers" are eliminated.
Keywords
Cooling; Furnaces; Laboratories; Large scale integration; Oxidation; Semiconductor devices; Silicon; Temperature; Thermal degradation; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1970. 8th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1970.362470
Filename
4207836
Link To Document