Title :
Interface Films in the Si-Al System
Author :
Lawrence, J.E. ; Khidr, M.S.
Author_Institution :
Fairchild Semiconductor, 464 Ellis Street, Mountain View, California
Abstract :
Carbon-like interface films exert both a metallurigical and electrical effect on Semiconductor products. Test devices without contamination have uniform silicon to aluminum diffusion, Rc approximately 3 × 10¿7 ohms cm2, and Vbe(sat) = 0. 84 v. Similar devices with massive interface films have restricted silicon to aluminum diffusion, Rc greater than 10¿6 devices recover during operation.
Keywords :
Aluminum; Chemicals; Circuit testing; Integrated circuit testing; Petroleum; Pollution measurement; Semiconductor films; Semiconductor thin films; Silicon; Thin film devices;
Conference_Titel :
Reliability Physics Symposium, 1970. 8th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1970.362472
