DocumentCode :
2602119
Title :
Interfacial Segregation of Metal at NiSi/Si Junction for Novel Dual Silicide Technology
Author :
Nishi, Yoshifumi ; Tsuchiya, Yoshinori ; Kinoshita, Atsuhiro ; Yamauchi, Takashi ; Koga, Junji
Author_Institution :
Toshiba Corp., Yokohama
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
135
Lastpage :
138
Abstract :
It is demonstrated that Schottky barrier height (PhiB) for NiSi/Si junction can be modulated by interfacial segregation of metals. Thin films of rare earth (RE) metals and platinum (Pt) are deposited on NiSi/Si Schottky diodes and annealed. The metals diffuse into NiSi and segregate at NiSi/Si interface, which leads to PhiB modulation by 0.1 eV. Similar technique can be applied to PtSi/Si junction as well for advanced dual silicide process.
Keywords :
Schottky barriers; Schottky diodes; annealing; nickel compounds; platinum; rare earth metals; semiconductor junctions; silicon compounds; Schottky barrier height; Schottky diodes; interfacial segregation; nickel; platinum; rare earth metals; silicide technology; silicon; Annealing; Charge carrier processes; Grain boundaries; MOS devices; Schottky barriers; Schottky diodes; Semiconductor thin films; Silicides; Sputtering; Thermionic emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4418883
Filename :
4418883
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2602119
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