Title :
A Novel Low Leakage-Current Ni SALICIDE Process in nMOSFETs on Si(110) Substrate
Author :
Yamaguchi, T. ; Kashihara, K. ; Kudo, S. ; Hayashi, K. ; Hashikawa, N. ; Okudaira, T. ; Tsutsumi, T. ; Maekawa, K. ; Oda, H. ; Asai, K. ; Kojima, M.
Author_Institution :
Renesas Technol. Corp., Hyogo
Abstract :
A novel low leakage-current Ni SALICIDE process in nMOSFETs on Si(110) is proposed. It is found for the first time that the anomalous off-state leakage-current (Ioff) in nMOSFETs on Si(110) is caused due to the inherent Ni silicide encroachment toward the channel region. Especially, <110> channel on Si(110) has fatal defect for CMOS fabrication. We propose two methods to suppress the anomalous Ioff, the creative ingenuity of design layout within SRAM and Si ion implantation (Si I.I.) technique. These two methods are quite effective to realize high performance and low cost CMOS devices on Si(110).
Keywords :
CMOS integrated circuits; MOSFET; elemental semiconductors; leakage currents; nickel compounds; silicon; CMOS devices; CMOS fabrication; Ni SALICIDE process; SRAM; Si; Si ion implantation technique; nMOSFET; off-state leakage-current; Degradation; Electron mobility; Fabrication; Ion implantation; MOS devices; MOSFETs; Semiconductor films; Silicides; Stacking; Substrates;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418884
