• DocumentCode
    2602171
  • Title

    Low Temperature Implementation of Dopant-Segregated Band-edge Metallic S/D junctions in Thin-Body SOI p-MOSFETs

  • Author

    Larrieu, G. ; Dubois, E. ; Valentin, R. ; Breil, N. ; Danneville, F. ; Dambrine, G. ; Raskin, J.P. ; Pesant, J.C.

  • Author_Institution
    IEMN - UMR CNRS, Villeneuve-d´´Ascq
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    147
  • Lastpage
    150
  • Abstract
    This paper proposes the implementation of a dopant segregated band-edge silicide using implantation-to-silicide and low temperature activation (500degC). The integration of platinum silicide coupled to boron segregation demonstrates a 50% enhancement of the current drive over the dopant-free approach. RF characterization unveils a cut-off frequency fT of 180 GHz at Lg=30 nm without application of channel stressors.
  • Keywords
    MOSFET; boron; platinum compounds; semiconductor doping; semiconductor junctions; silicon-on-insulator; dopant segregated band-edge silicide; frequency 180 GHz; implantation-to-silicide; metallic S/D junctions; source/drain junctions; thin-body SOI p-MOSFET; Boron; Immune system; MOSFET circuits; Platinum; Radio frequency; Schottky barriers; Silicidation; Silicides; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4418886
  • Filename
    4418886
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2602171