Title :
Low Temperature Implementation of Dopant-Segregated Band-edge Metallic S/D junctions in Thin-Body SOI p-MOSFETs
Author :
Larrieu, G. ; Dubois, E. ; Valentin, R. ; Breil, N. ; Danneville, F. ; Dambrine, G. ; Raskin, J.P. ; Pesant, J.C.
Author_Institution :
IEMN - UMR CNRS, Villeneuve-d´´Ascq
Abstract :
This paper proposes the implementation of a dopant segregated band-edge silicide using implantation-to-silicide and low temperature activation (500degC). The integration of platinum silicide coupled to boron segregation demonstrates a 50% enhancement of the current drive over the dopant-free approach. RF characterization unveils a cut-off frequency fT of 180 GHz at Lg=30 nm without application of channel stressors.
Keywords :
MOSFET; boron; platinum compounds; semiconductor doping; semiconductor junctions; silicon-on-insulator; dopant segregated band-edge silicide; frequency 180 GHz; implantation-to-silicide; metallic S/D junctions; source/drain junctions; thin-body SOI p-MOSFET; Boron; Immune system; MOSFET circuits; Platinum; Radio frequency; Schottky barriers; Silicidation; Silicides; Silicon; Temperature;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418886
