Title :
Pushing Planar Bulk CMOSFET Scaling to its Limit by Ultimately Shallow Diffusion-Less Junction
Author :
Uejima, K. ; Yako, K. ; Ikarashi, N. ; Narihiro, M. ; Tanaka, M. ; Nagumo, T. ; Mineji, A. ; Shishiguchi, S. ; Hane, M.
Author_Institution :
NEC Corp., Ibaraki
Abstract :
The scaling limit of planar bulk MOSFETs with ultra-shallow junction (USJ) by using diffusion-less high-activation annealing technique has been investigated. Incorporation of cluster-ion (B18H22) implantation for PFETs and high-temperature msec-annealing, where the dedicated fabrication-process was redesigned including multiple halo implantation and thin SD-silicidation, enables us to examine near-scaling limit bulk CMOS device performance with ultimately shallow junction (5-15 nm). Techniques developed here to overcome trade-off between the functionable minimum gate length (Lmin) and on-current (Ion, including suppression of surface-recess on S/D extension, higher activation of S/D-extension with optimized msec-annealing condition and the resistance reduction with optimized spacing of the bottleneck at the joint of S/D-ext and deep-S/D junction. Those techniques highly contribute device performance enhancement by effectively reducing large parasitic resistance due to extremely shallow Xj. Theoretical estimation implies that fully low parasitic resistance, thin Tinv and ultimately shallow Xj extend Lmin scaling to about 20 nm for planar bulk CMOSFET.
Keywords :
CMOS integrated circuits; annealing; ion implantation; scaling circuits; PFET; cluster ion implantation; high temperature msec annealing; near scaling limit bulk CMOS device; planar bulk CMOSFET scaling; shallow diffusion less junction; size 5 nm to 15 nm; Annealing; CMOSFETs; Discrete event simulation; Electrons; Holography; MOSFETs; National electric code; Predictive models; Surface resistance; Temperature;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418887