• DocumentCode
    2602207
  • Title

    Extendibility of NiPt Silicide Contacts for CMOS Technology Demonstrated to the 22-nm Node

  • Author

    Ohuchi, Kouji ; Lavoie, C. ; Murray, Casey ; D´Emic, C. ; Chu, J.O. ; Bin Yang ; Besser, P. ; Gignac, Lynne ; Bruley, J. ; Singco, G.U. ; Pagette, F. ; Topol, A.W. ; Rooks, Michael J. ; Bucchignano, J.J. ; Narayanan, Vijaykrishnan ; Khare, Manish ; Takaya

  • Author_Institution
    Toshiba America Electron. Components Inc., Yorktown Heights,
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    1029
  • Lastpage
    1031
  • Abstract
    This paper shows ultra-low contact resistivities with standard NiPt silicide process that can reach below 10-8 Omega-cm2 for both n+ and p+ Si and demonstrates that NiPt silicide can fulfill CMOS technology requirements down to the ITRS 22 nm node.
  • Keywords
    MOSFET; contact resistance; electrical contacts; nickel compounds; platinum compounds; semiconductor device measurement; (NiPt)Si; CMOS devices; CMOS technology; contact resistivity measurements; e-beam lithography; silicide contacts; size 22 nm; ultra-low contact resistivity; Area measurement; Boron; CMOS technology; Conductivity; Contact resistance; Electrical resistance measurement; Silicides; Silicon on insulator technology; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4418888
  • Filename
    4418888
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2602207