Title :
Extendibility of NiPt Silicide Contacts for CMOS Technology Demonstrated to the 22-nm Node
Author :
Ohuchi, Kouji ; Lavoie, C. ; Murray, Casey ; D´Emic, C. ; Chu, J.O. ; Bin Yang ; Besser, P. ; Gignac, Lynne ; Bruley, J. ; Singco, G.U. ; Pagette, F. ; Topol, A.W. ; Rooks, Michael J. ; Bucchignano, J.J. ; Narayanan, Vijaykrishnan ; Khare, Manish ; Takaya
Author_Institution :
Toshiba America Electron. Components Inc., Yorktown Heights,
Abstract :
This paper shows ultra-low contact resistivities with standard NiPt silicide process that can reach below 10-8 Omega-cm2 for both n+ and p+ Si and demonstrates that NiPt silicide can fulfill CMOS technology requirements down to the ITRS 22 nm node.
Keywords :
MOSFET; contact resistance; electrical contacts; nickel compounds; platinum compounds; semiconductor device measurement; (NiPt)Si; CMOS devices; CMOS technology; contact resistivity measurements; e-beam lithography; silicide contacts; size 22 nm; ultra-low contact resistivity; Area measurement; Boron; CMOS technology; Conductivity; Contact resistance; Electrical resistance measurement; Silicides; Silicon on insulator technology; Testing; Voltage;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418888
