DocumentCode :
2602272
Title :
Silicon MOSFET technology for RF ICs
Author :
Lovelace, David ; Ngo, David ; Costa, Julio ; Camilleri, Natalino
Volume :
3
fYear :
1995
fDate :
27-29 Sept. 1995
Firstpage :
1238
Abstract :
Application of silicon MOSFET technologies to high frequency RF transceiver functions will be presented. Starting with a description of the high frequency characteristics of silicon MOSFETs designed specifically for RF applications. These applications include several RF functions where silicon MOSFETs have not traditionally been used such as low noise amplifiers, balanced mixers, RF switches and integrated power amplifiers. Finally a description of the performance trade-offs associated with silicon BJT (bipolar junction transistor) technology are given along with an evaluation of how BiCMOS (bipolar-CMOS) technologies can sometimes serve as the best solution to RF IC designs
Keywords :
BiCMOS integrated circuits; Integrated circuit noise; Low-noise amplifiers; MOSFET circuits; Power MOSFET; Radio frequency; Radiofrequency amplifiers; Silicon; Switches; Transceivers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Personal, Indoor and Mobile Radio Communications, 1995. PIMRC'95. Wireless: Merging onto the Information Superhighway., Sixth IEEE International Symposium on
Conference_Location :
Toronto, Ont., Canada
Print_ISBN :
0-7803-3002-1
Type :
conf
DOI :
10.1109/PIMRC.1995.477360
Filename :
477360
Link To Document :
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