DocumentCode
2602294
Title
Charge Storage in MNOS Transistors at Electric Fields Near Gate Insulator Breakdown
Author
Cricchi, J.R. ; Reed, W.D., Jr.
Author_Institution
Westinghouse Electric Corporation, Defense and Space Center, Systems Development Division, P.O. Box 1521, M.S. 3525, Baltimore, Maryland 21203
fYear
1971
fDate
25993
Firstpage
1
Lastpage
8
Abstract
The charge retention time to write the time ratio of MNOS memory transistors may be improved by using high field pulses near 107 V/cm in the oxide. Degradation effects including hysteresis loop (Vt vs Vgs) collapse and reduced storage time have been studied at pulse fields in the oxide as high as 1. 6 × 107 V/cm and current densities as great as 30 A/cm2 to determine reliable yulsed high field operating limits beyond the dc limit of 107 V/cm.
Keywords
Current density; Degradation; Dielectrics and electrical insulation; Electric breakdown; Hysteresis; Nonvolatile memory; Pulse measurements; Read-write memory; Space vector pulse width modulation; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1971. 9th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1971.362483
Filename
4207852
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