Title :
Emitter Avalanche Currents in Gated Transistors
Author_Institution :
Philips Research Laboratories, N. V. Philips´´ Gloeilampenfabrieken, Eindhoven-Netherlands
Keywords :
Avalanche breakdown; Boron; Breakdown voltage; Circuit stability; Current measurement; Electric breakdown; Electrons; Interface states; Laboratories; Stress;
Conference_Titel :
Reliability Physics Symposium, 1971. 9th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1971.362485
