• DocumentCode
    2602347
  • Title

    Random telegraph noise in flash memories - model and technology scaling

  • Author

    Fukuda, Koichi ; Shimizu, Yuui ; Amemiya, Kazumi ; Kamoshida, Masahiro ; Hu, Chenming

  • Author_Institution
    Univ. of California, Berkeley
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    169
  • Lastpage
    172
  • Abstract
    This paper presents the first statistical model of Vt fluctuation (ΔVtcell) in a floating-gate flash memory due to random telegraph noise. It considers current-path percolation, which generates a large-amplitude-noise tail, caused by dopant induced surface potential non-uniformity It concludes that the impact of scaling is weaker than the widely-accepted 1/LeffWeff trend. 3-σ ΔVtcell is estimated to increase by 1.8x rather than ≫10x from 90 nm to 20 nm technology nodes.
  • Keywords
    circuit noise; flash memories; nanotechnology; random noise; statistical analysis; surface potential; current-path percolation; dopant induced surface potential; floating-gate flash memories; large-amplitude-noise tail; random telegraph noise; statistical model; technology scaling; Electron traps; Flash memory; Fluctuations; Noise level; Noise measurement; Nonvolatile memory; Semiconductor device noise; Semiconductor process modeling; Telegraphy; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4418893
  • Filename
    4418893
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2602347