Title :
Degradation and Passivation of GaP Light-Emitting Diodes
Author :
Hartman, R.L. ; Kuhn, M. ; Schwartz, B.
Author_Institution :
Bell Telephone Laboratories, Incorporated, Murray Hill, New Jersey 07974
Abstract :
Degradation of electroluminescence of GaP light-emitting diodes has been Significantly reduced by chemical passivation of the surfaces. Passivation was achieved by producing an amorphous native oxide over the exposed surfaces of completed diode structures. Degradation characteristics of passivated and unpassivated devices are discussed and qualitatively explained in terms of a simple model.
Keywords :
Amorphous materials; Annealing; Chemicals; Degradation; Electroluminescence; Light emitting diodes; Passivation; Surface cleaning; Surface treatment; X-ray diffraction;
Conference_Titel :
Reliability Physics Symposium, 1971. 9th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1971.362486
