Characterization and Monte Carlo Analysis of Secondary Electrons Induced Program Disturb in a Buried Diffusion Bit-line SONOS Flash Memory

Author

Tang, Chun-Jung ; Li, C.W. ; Tahui Wang ; Gu, S.H. ; Chen, P.C. ; Chang, Y.W. ; Lu, T.C. ; Lu, W.P. ; Chen, K.C. ; Lu, Chih-Yuan

Author_Institution

Nat. Chiao-Tung Univ., Hsin-Chu

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

173

Lastpage

176

Abstract

A new program disturb in a buried diffusion bit-line SONOS array is observed as a bit-line width is reduced. A multi-step Monte Carlo simulation is performed to explore the disturb mechanism. We find that the Vt shift of a disturbed cell is attributed to impact ionization-generated secondary electrons in a neighboring cell when it is in programming. The effects of substrate bias, bit-line dimension and pocket implant on the program disturb are characterized and evaluated by a Monte Carlo simulation.

Keywords

Monte Carlo methods; electron beam effects; flash memories; logic arrays; nitrogen compounds; silicon compounds; substrates; Vt shift; buried diffusion bit-line SONOS flash memory array; impact ionization-generated secondary electron; multi step Monte Carlo analysis; pocket implant; secondary electrons induced program disturbance; substrate bias; Charge carrier processes; Electronics industry; Electrons; Flash memory; Impact ionization; Industrial electronics; Medical simulation; Monte Carlo methods; SONOS devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4418894

Filename

4418894