A Microscopic Understanding of Nanometer Scale DENMOS Failure Mechanism under ESD Conditions

Author

Chatterjee, Amitabh ; Pendharkar, Sameer ; Lin, Yen-Yi ; Duvvury, Charvaka ; Banerje, Kaustav

Author_Institution

Univ. of California, Santa Barbara

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

181

Lastpage

184

Abstract

We present for the first time, analysis of irreversible snapback caused due to the regenerative n-p-n turn-on in a DENMOS through a critical understanding of ´thermal runaway´ under ESD conditions. The estimated It₂ value from transient simulations has been correlated with the quasi-steady TLP data. A new regenerative bipolar turn-on induced failure model has been proposed and corroborated with experimental observations and failure analysis. We have also investigated the current crowding mechanism to understand the improvement in It₂ value under gate and substrate biasing.

Keywords

MOSFET; bipolar transistors; electrostatic discharge; failure analysis; nanoelectronics; semiconductor device breakdown; semiconductor device models; semiconductor device testing; ESD conditions; current crowding mechanism; drain extended NMOS; gate biasing condition; irreversible snapback analysis; nanometer scale DENMOS failure mechanism; quasisteady TLP data; regenerative bipolar turn-on induced failure model; second breakdown phenomenon; substrate biasing condition; thermal runaway; transient simulations; CMOS process; CMOS technology; Circuits; Electrostatic discharge; Failure analysis; MOS devices; Microscopy; Predictive models; Proximity effect; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4418896

Filename

4418896