Title :
A Microscopic Understanding of Nanometer Scale DENMOS Failure Mechanism under ESD Conditions
Author :
Chatterjee, Amitabh ; Pendharkar, Sameer ; Lin, Yen-Yi ; Duvvury, Charvaka ; Banerje, Kaustav
Author_Institution :
Univ. of California, Santa Barbara
Abstract :
We present for the first time, analysis of irreversible snapback caused due to the regenerative n-p-n turn-on in a DENMOS through a critical understanding of ´thermal runaway´ under ESD conditions. The estimated It2 value from transient simulations has been correlated with the quasi-steady TLP data. A new regenerative bipolar turn-on induced failure model has been proposed and corroborated with experimental observations and failure analysis. We have also investigated the current crowding mechanism to understand the improvement in It2 value under gate and substrate biasing.
Keywords :
MOSFET; bipolar transistors; electrostatic discharge; failure analysis; nanoelectronics; semiconductor device breakdown; semiconductor device models; semiconductor device testing; ESD conditions; current crowding mechanism; drain extended NMOS; gate biasing condition; irreversible snapback analysis; nanometer scale DENMOS failure mechanism; quasisteady TLP data; regenerative bipolar turn-on induced failure model; second breakdown phenomenon; substrate biasing condition; thermal runaway; transient simulations; CMOS process; CMOS technology; Circuits; Electrostatic discharge; Failure analysis; MOS devices; Microscopy; Predictive models; Proximity effect; Silicon;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418896
