Title :
Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress
Author :
Moselund, K.E. ; Dobrosz, P. ; Olsen, S. ; Pott, V. ; De Michielis, L. ; Tsamados, D. ; Bouvet, D. ; O´Neill, A. ; Ionescu, A.M.
Author_Institution :
Ecole Polytech. Fed. de Lausanne, Lausanne
Abstract :
In this paper we investigate the mobility enhancement due to strain in bended NW MOSFETs. Stress of 200 MPa to 2 GPa, induced by thermal oxidation, is measured in suspended NW FETs by Raman spectroscopy. Mobility enhancement of more than 100% is observed. Performance gain of bended compared to non-bended structures is most pronounced in low field conditions and at low temperatures.
Keywords :
MOSFET; Raman spectroscopy; bending; carrier mobility; gain measurement; nanoelectronics; nanowires; oxidation; semiconductor device measurement; stress analysis; Raman spectroscopy; bended gate-all-around nanowire MOSFET; electrical measurements; enhanced carrier mobility; low field conditions; low temperature conditions; mobility extraction; performance gain; suspended NW FET; thermal oxidation-induced tensile stress; Capacitive sensors; FETs; MOSFET circuits; Nanoscale devices; Oxidation; Raman scattering; Spectroscopy; Stress measurement; Tensile stress; Thermal stresses;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418899
