Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

Author

Moselund, K.E. ; Dobrosz, P. ; Olsen, S. ; Pott, V. ; De Michielis, L. ; Tsamados, D. ; Bouvet, D. ; O´Neill, A. ; Ionescu, A.M.

Author_Institution

Ecole Polytech. Fed. de Lausanne, Lausanne

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

191

Lastpage

194

Abstract

In this paper we investigate the mobility enhancement due to strain in bended NW MOSFETs. Stress of 200 MPa to 2 GPa, induced by thermal oxidation, is measured in suspended NW FETs by Raman spectroscopy. Mobility enhancement of more than 100% is observed. Performance gain of bended compared to non-bended structures is most pronounced in low field conditions and at low temperatures.

Keywords

MOSFET; Raman spectroscopy; bending; carrier mobility; gain measurement; nanoelectronics; nanowires; oxidation; semiconductor device measurement; stress analysis; Raman spectroscopy; bended gate-all-around nanowire MOSFET; electrical measurements; enhanced carrier mobility; low field conditions; low temperature conditions; mobility extraction; performance gain; suspended NW FET; thermal oxidation-induced tensile stress; Capacitive sensors; FETs; MOSFET circuits; Nanoscale devices; Oxidation; Raman scattering; Spectroscopy; Stress measurement; Tensile stress; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4418899

Filename

4418899