A high PSRR fully-MOSFET voltage reference with virtually diode-connected MOS transistors

Author

Souri, Kianoush ; Shamsi, Hossein ; Kazemi, Mehrshad ; Souri, Kamran

fYear

2010

fDate

20-23 June 2010

Firstpage

301

Lastpage

304

Abstract

This paper presents a voltage reference that utilizes the virtually diode-connected MOS transistors, biased in the weak-inversion region. The proposed architecture increases the gain of the feedback loop that consequently reduces the system sensitivity, and hence improves the PSRR. The circuit is designed and simulated in a standard 0.18 μm CMOS technology. The simulation results in HSPICE indicate successful operation of the circuit as follows: the PSRR at DC frequency is 94 dB and for the temperature range from -55°C to 125°C, the variation of the output reference voltage is less than 83 ppm/ °C.

Keywords

CMOS integrated circuits; MOSFET; reference circuits; semiconductor diodes; CMOS technology; DC frequency; HSPICE simulation; feedback loop; high PSRR fully-MOSFET voltage reference; power supply rejection ratio; size 0.18 mum; system sensitivity; temperature -55 degC to 125 degC; virtual diode-connected MOS transistors; CMOS integrated circuits; Feedback loop; MOSFETs; Photonic band gap; Sensitivity; Temperature dependence; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

NEWCAS Conference (NEWCAS), 2010 8th IEEE International

Conference_Location

Montreal, QC

Print_ISBN

978-1-4244-6806-5

Electronic_ISBN

978-1-4244-6804-1

Type

conf

DOI

10.1109/NEWCAS.2010.5603949

Filename

5603949