Title :
Comparison of 1/f PM noise in commercial amplifiers
Author :
Aramburo, M. C Delgado ; Ferre-Pikal, E.S. ; Walls, F.L. ; Ascarrunz, H.D.
Author_Institution :
Nat. Inst. of Stand. & Technol., Boulder, CO, USA
Abstract :
In this paper we compare the 1/f phase modulation (PM) noise of two different families of commercial amplifiers under different operating conditions. The first family used GaAs heterojunction bipolar transistors (HBT) while the second used Si bipolar junction transistors (BJT) in a Darlington pair amplifier configuration. Three currents for the HBT family and four currents for the BST family were chosen for study. The PM noise of the amplifiers was measured at carrier frequencies of 5, 10, and 100 MHz. In general, the HBT-based amplifiers had somewhat lower PM noise than the BJT based amplifiers. Amplifiers operating with higher current generally had lower PM noise than those operating with lower current. A commercial feed-forward amplifier had much lower 1/f PM noise than all the other commercial amplifiers tested
Keywords :
1/f noise; III-V semiconductors; bipolar transistor circuits; circuit noise; electric noise measurement; elemental semiconductors; gallium arsenide; heterojunction bipolar transistors; phase modulation; radiofrequency amplifiers; semiconductor device noise; silicon; 1/f PM noise; 10 MHz; 100 MHz; 5 MHz; Darlington pair; GaAs; GaAs heterojunction bipolar transistors; Si; Si bipolar junction transistors; carrier frequencies; commercial amplifiers; feed-forward amplifier; phase modulation; Binary search trees; Feedforward systems; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Low-noise amplifiers; Noise measurement; Phase modulation; Phase noise; Testing;
Conference_Titel :
Frequency Control Symposium, 1997., Proceedings of the 1997 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-3728-X
DOI :
10.1109/FREQ.1997.638645
