DocumentCode :
2602634
Title :
F-TES ADT Organic Integrated Circuits on Glass and Plastic Substrates
Author :
Park, Sung Kyu ; Mourey, Devin A. ; Kim, Insoo ; Zhao, Dalong ; Subramanian, Sankar ; Anthony, John E. ; Jackson, Thomas N.
Author_Institution :
Center for Thin Film Devices and Materials Research Institute, Department of Electrical Engineering, Penn State University, University Park, PA 16802 USA. e-mail: sxp938@psu.edu
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
225
Lastpage :
228
Abstract :
Using the small-molecule organic semiconductor fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene (F-TES ADT), we have fabricated spin cast organic thin film transistors (OTFTs) and integrated circuits on glass and plastic substrates. Our F-TES ADT spin cast films are deposited at room temperature from toluene or chlorobenzene solutions with no annealing steps. Film growth is considerably more ordered on pentafluorobenzenethiol (PFBT) treated Au electrodes surfaces than on oxide and on samples with patterned PFBT-Au structures grains appear to grow out from the PFBT-Au areas into the oxide areas. OTFTs fabricated on silicon wafers have mobility of 0.1 - 0.4 cm2/V·s and 0.2 - 1.0 cm2 / V·s spin cast from toluene and cholobenzene solutions respectively. Results for operational and environmental stability of spin cast F-TES ADT OTFTs and circuits on both glass and plastic substrates are also presented.
Keywords :
Annealing; Glass; Gold; Organic semiconductors; Organic thin film transistors; Plastics; Semiconductor films; Substrates; Temperature; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4418908
Filename :
4418908
Link To Document :
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