DocumentCode :
2602638
Title :
Electromigration Damage in Al-Cu Thin Films
Author :
Berenbaum, L. ; Rosenberg, R.
Author_Institution :
IBM Components Division, East Fishkill Facility, Hopewell Junction, New York 12533
fYear :
1971
fDate :
25993
Firstpage :
136
Lastpage :
141
Abstract :
Al-3% Cu stripes are powered in situ in the transmission electron microscope in order to study the effect of copper on the mechanisms of failure due to electro-migration. Consideration is given to the effects of various heat treatments and the depletion of Cu in the damage zone.
Keywords :
Aluminum; Copper; Electromigration; Grain boundaries; Heat treatment; Silicon; Surface morphology; Testing; Transistors; Transmission electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1971. 9th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1971.362506
Filename :
4207875
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2602638
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