• DocumentCode
    2602711
  • Title

    Thermal Excursion Can Cause Bond Problems

  • Author

    Nowakowski, Michael F. ; Villella, Felminio

  • Author_Institution
    NASA/MSFC, S&E-QUAL-QT, Marshall Space Flight Center, Huntsville, Alabama 35812
  • fYear
    1971
  • fDate
    25993
  • Firstpage
    172
  • Lastpage
    177
  • Abstract
    The purpose of this paper is to illustrate the failure mode caused by thermal deformation and how thermal deformation affects bond integrity. Wedge bonding in small-signal transistors, microcircuits and LSI circuits is the subject of this work. Repeated switching of the devices between high and low power at a rate that allows thermal expansion and contraction in the interconnecting wire causes the wire to flex at the point of reduced cross-sectional area until finally the wire breaks due to metal fatigue. It was observed that the thermal deformation was related to many factors such as device power dissipation, current density in the wire, wire dress and length, thermal time constant and frequency of operation.
  • Keywords
    Bonding; Current density; Fatigue; Frequency; Integrated circuit interconnections; Large scale integration; Power dissipation; Thermal expansion; Thermal factors; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1971. 9th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1971.362511
  • Filename
    4207880