DocumentCode
2602711
Title
Thermal Excursion Can Cause Bond Problems
Author
Nowakowski, Michael F. ; Villella, Felminio
Author_Institution
NASA/MSFC, S&E-QUAL-QT, Marshall Space Flight Center, Huntsville, Alabama 35812
fYear
1971
fDate
25993
Firstpage
172
Lastpage
177
Abstract
The purpose of this paper is to illustrate the failure mode caused by thermal deformation and how thermal deformation affects bond integrity. Wedge bonding in small-signal transistors, microcircuits and LSI circuits is the subject of this work. Repeated switching of the devices between high and low power at a rate that allows thermal expansion and contraction in the interconnecting wire causes the wire to flex at the point of reduced cross-sectional area until finally the wire breaks due to metal fatigue. It was observed that the thermal deformation was related to many factors such as device power dissipation, current density in the wire, wire dress and length, thermal time constant and frequency of operation.
Keywords
Bonding; Current density; Fatigue; Frequency; Integrated circuit interconnections; Large scale integration; Power dissipation; Thermal expansion; Thermal factors; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1971. 9th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1971.362511
Filename
4207880
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