Title :
High-Performance and Low-Power Bulk Logic Platform Utilizing FET Specific Multiple-Stressors with Highly Enhanced Strain and Full-Porous Low-k Interconnects for 45-nm CMOS Technology
Author :
Miyashita, Tadakazu ; Ikeda, Ken-ichi ; Kim, Yong Sin ; Yamamoto, Takayuki ; Sambonsugi, Y. ; Ochimizu, H. ; Sakoda, Tatsuya ; Okuno, Masayuki ; Minakata, Hideaki ; Ohta, Hitoyoshi ; Hayami, Y. ; Ookoshi, K. ; Shimamune, Y. ; Fukuda, Motohisa ; Hatada, Ak
Author_Institution :
Fujitsu Lab. Ltd., Tokyo
Abstract :
We present an aggressively-scaled high-performance and low-power bulk CMOS platform technology aiming at large-scale (multi-core) high-end use with 45-nm ground rule. By utilizing a high-epsilon offset spacer and FET specific multiple-stressors with highly enhanced strain, world competitive high performance NFET and PFET drive currents of 1.22/0.765 mA/mum at 100 nA/mum off-current, and 0.97/0.63 mA/mum at 10 nA/mum off-current at |Vd|= 1V, respectively, were obtained with minimizing layout dependence. This technology also offers a functional high density SRAM with a much smaller cell, i.e., 0.255 mum2. In addition, full- porous low-k (k = 2.25) BEOL integration lowers RC delay and reduces total circuit delay by 25% at the long wiring region compared to that of our previous technology.
Keywords :
CMOS logic circuits; CMOS memory circuits; MOSFET; SRAM chips; integrated circuit interconnections; low-k dielectric thin films; BEOL integration; FET specific multiple-stressors; NFET drive currents; PFET drive currents; RC delay; full-porous low-k interconnects; functional high density SRAM; high-epsilon offset spacer; low-power bulk CMOS platform technology; size 45 nm; total circuit delay; ultra low-k BEOL technology; CMOS logic circuits; CMOS technology; Capacitive sensors; Delay; FETs; Integrated circuit interconnections; Large-scale systems; Random access memory; Space technology; Wiring;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418915
