DocumentCode :
2602813
Title :
Record RF performance of 45-nm SOI CMOS Technology
Author :
Lee, Sungjae ; Jagannathan, Basanth ; Narasimha, Shreesh ; Chou, Anthony ; Zamdmer, Noah ; Johnson, Jim ; Williams, Richard ; Wagner, Lawrence ; Kim, Jonghae ; Plouchart, Jean-Olivier ; Pekarik, John ; Springer, Scott ; Freeman, Greg
Author_Institution :
IBM Syst. & Technol. Group, Essex Junction,
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
255
Lastpage :
258
Abstract :
We report record RF performance in 45-nm silicon-on- insulator (SOI) CMOS technology. RF performance scaling with channel length and layout optimization is demonstrated. Peak fT´s of 485 GHz and 345 GHz are measured in floating- body NFET and PFET with nearby wiring parasitics (i.e., gate- to-contact capacitance) included after de-embedding, thus representing FET performance in a real design. The measured fT´s are the highest ever reported in a CMOS technology. Body- contacted FETs are also analyzed that have layout optimized for high-frequency analog applications. Employing a notched body contact layout, we reduce parasitic capacitance and gate leakage current significantly, thus improving RF performance with low power. For longer than minimum channel length and a body-contacted NFET with notched layout, we measure a peak fT of 245 GHz with no degradation in critical analog figures of merit, such as self-gain.
Keywords :
CMOS integrated circuits; field effect transistors; integrated circuit layout; leakage currents; radiofrequency integrated circuits; silicon-on-insulator; SOI CMOS technology; field effect transistor; floating-body NFET; floating-body PFET; frequency 345 GHz; frequency 485 GHz; gate leakage current; notched body contact layout; parasitic capacitance; record RF performance; silicon-on-insulator; size 45 nm; CMOS technology; Capacitance measurement; FETs; Insulation; Leakage current; Length measurement; Parasitic capacitance; Radio frequency; Silicon on insulator technology; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4418916
Filename :
4418916
Link To Document :
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