Technology Elements of a Common Platform Bulk Foundry Offering (Invited)

Author

Gilbert, P. ; Steegen, A. ; Coolbaugh, D. ; Ramachandran, V. ; Mocuta, A. ; Hook, T. ; Angyal, M. ; Moy, D.

Author_Institution

IBM Semicond. Res. & Dev. Center, Hopewell

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

259

Lastpage

262

Abstract

A common platform technology at 65 nm is described. The platform consists of a low-power CMOS base technology with a broad menu of optional features including high- performance passive devices, standard cell libraries, SRAM compilers and a process design kit enabling custom design. These elements enable competitive leadership technology for ASICs and Foundry applications, resulting in a highly competitive technology that is an excellent choice when performance and cost must be balanced.

Keywords

CMOS logic circuits; CMOS memory circuits; MOSFET; SRAM chips; application specific integrated circuits; costing; integrated circuit manufacture; low-power electronics; ASIC; SRAM cell device; SRAM compilers; common platform technology; competitive leadership technology; foundry applications; high- performance passive devices; low-power CMOS base technology; size 65 nm; standard cell libraries; CMOS process; CMOS technology; Capacitive sensors; Dielectric devices; Foundries; Libraries; Power engineering and energy; Production facilities; Random access memory; Research and development;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4418917

Filename

4418917