DocumentCode :
2602967
Title :
Simulations of pulse signals with X-parameters
Author :
Huang, Nick K H ; Jiang, Lijun
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Pokfulam, China
fYear :
2011
fDate :
23-26 Oct. 2011
Firstpage :
129
Lastpage :
132
Abstract :
Nonlinearity is becoming increasingly important to IC technologies. From the PHD formalism, X-parameter models provide an accurate frequency-domain method under large-signal operating points to characterize their nonlinear behaviors. In this work, X-parameter models are investigated to handle time- domain pulse signals which is critical to IC signal integrity but was not studied before. Two representative circuits, an analog LNA and a digital CMOS buffer, were employed to characterize the X-parameter performance. The results obtained in this paper provide the first hand data for pulse signal responses of X- parameters in signal integrity modelings.
Keywords :
CMOS digital integrated circuits; analogue circuits; buffer circuits; frequency-domain analysis; integrated circuit design; integrated circuit modelling; low noise amplifiers; microwave integrated circuits; IC signal integrity; X-parameter; analog LNA; digital CMOS buffer; frequency domain method; large signal operation; pulse signal simulations; signal integrity modeling; time domain pulse signals; CMOS integrated circuits; Gain; Harmonic analysis; Integrated circuit modeling; Semiconductor device modeling; Time frequency analysis; Nonlinearity; X-parameters; polyharmonic distortion; pulse signal;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Performance of Electronic Packaging and Systems (EPEPS), 2011 IEEE 20th Conference on
Conference_Location :
San Jose, CA
ISSN :
pending
Print_ISBN :
978-1-4244-9398-2
Electronic_ISBN :
pending
Type :
conf
DOI :
10.1109/EPEPS.2011.6100206
Filename :
6100206
Link To Document :
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