DocumentCode :
2603041
Title :
(110) channel, SiON gate-dielectric PMOS with record high Ion=1 mA/μm through channel stress and source drain external resistance (Rext) engineering
Author :
Yang, B. ; Waite, A. ; Yin, H. ; Yu, J. ; Black, L. ; Chidambarrao, D. ; Domenicucci, A. ; Wang, X. ; Ku, S.H. ; Wang, Y. ; Meer, H.V. ; Kim, B. ; Nayfeh, H. ; Kim, S.D. ; Tabakman, K. ; Pal, R. ; Nummy, K. ; Greene, B. ; Fisher, P. ; Liu, J. ; Liang, Q.
Author_Institution :
Adv. Micro Devices, Hopewell Junction
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
1032
Lastpage :
1034
Abstract :
This paper presents for the first time (110) PMOS characteristics without Rext degradation, allowing investigation of fundamental mobility and demonstration of drive current Ion in excess of 1mA/mum at Ioff =100 nA/μm.
Keywords :
MOSFET; dielectric materials; semiconductor device models; silicon compounds; PMOS channel mobility response; SiON; channel stress; drive current; gate-dielectric PMOS device characteristics; source drain external resistance engineering; Atomic measurements; Compressive stress; Contact resistance; Degradation; Dielectrics; FETs; Fabrication; FinFETs; Gate leakage; MOS devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4418927
Filename :
4418927
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2603041
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