Reliability Improvement with New Passivation of Solid Encapsulated Transistors

This late news paper is a report on the design and the evaluation of a new passivation technique for plastic encapsulated transistors. A family of small signal solid encapsulated transistors has been designed and fabricated and tests have shown that they are able to perform to military specifications. The structure of these devices includes a clean silicon dioxide passivation layer sealed with a barrier of silicon nitride, a gold coated refractory metalization system and a high temperature glass coating.