DocumentCode
2603135
Title
Statistical analysis and modeling of programming and retention in PCM arrays
Author
Mantegazza, D. ; Ielmini, Daniele ; Varesi, E. ; Pirovano, A. ; Lacaita, A.L.
Author_Institution
Politecnico di Milano, Milan
fYear
2007
fDate
10-12 Dec. 2007
Firstpage
311
Lastpage
314
Abstract
In this work programming and retention statistics in phase change memory arrays are discussed and modeled. In particular, we provide a) an analytical, empirical model for set, reset and retention statistics and b) a physics-based retention model based on crystallization in presence of composition fluctuations at the nm scale of the active material. The models allow predicting programming/retention distributions at array level.
Keywords
crystallisation; integrated memory circuits; nanostructured materials; phase change materials; statistical analysis; active material; composition fluctuations; crystallization; phase change memory arrays; physics-based retention model; programming statistics; statistical analysis; Analytical models; Composite materials; Crystallization; Fluctuations; Phase change materials; Phase change memory; Phased arrays; Statistical analysis; Statistical distributions; Statistics;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location
Washington, DC
Print_ISBN
978-1-4244-1507-6
Electronic_ISBN
978-1-4244-1508-3
Type
conf
DOI
10.1109/IEDM.2007.4418933
Filename
4418933
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