DocumentCode :
2603174
Title :
A Novel Cross-Spacer Phase Change Memory with Ultra-Small Lithography Independent Contact Area
Author :
Chen, W.S. ; Lee, C.M. ; Chao, D.S. ; Chen, Y.C. ; Chen, F. ; Chen, C.W. ; Yen, P.H. ; Chen, M.J. ; Wang, W.H. ; Hsiao, T.C. ; Yeh, J.T. ; Chiou, S.H. ; Liu, M.Y. ; Wang, T.C. ; Chein, L.L. ; Huang, C.M. ; Shih, N.T. ; Tu, L.S. ; Huang, D. ; Yu, T.H. ; Ka
Author_Institution :
ITRI, Hsinchu
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
319
Lastpage :
322
Abstract :
A cross-spacer phase change memory (PCM) cell with ultra-small lithography-independent contact area for reduced writing current has been successfully demonstrated. By crossing the spacer sidewalls of phase change and heater material, a small contact area of ~1,000 nm2 with 0.23 mA reset current is therefore obtained. The result of a derived 2-bit per cell (Chain) structure is also shown. The cross-spacer cell structure is a potential candidate for PCM with multi-bit per cell in one PC layer.
Keywords :
lithography; phase change materials; PCM cell; cross-spacer phase change memory; lithography; Chemical technology; Electrodes; Etching; Laboratories; Lithography; Phase change materials; Phase change memory; Space heating; Space technology; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4418935
Filename :
4418935
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2603174
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