Title :
A Reliability Study of Insulated Gate Field Effect Transistors with an Al2O3-SiO2 Gate Structure
Author :
Lampi, E.E. ; Labuda, E.F.
Author_Institution :
Bell Telephone Laboratories, Inc., 555 Union Blvd., Allentown, Pennsylvania
Keywords :
Aging; Annealing; Dielectrics and electrical insulation; Electron beams; FETs; Palladium; Platinum; Sputtering; Threshold voltage; Titanium;
Conference_Titel :
Reliability Physics Symposium, 1972. 10th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1972.362538
