Title :
The Role of Interfaces in Damascene Phase-Change Memory
Author :
Kencke, David L. ; Karpov, Ilya V. ; Johnson, Brian G. ; Lee, Sean Jong ; Kau, DerChang ; Hudgens, Stephen J. ; Reifenberg, John P. ; Savransky, Semyon D. ; Zhang, Jingyan ; Giles, Martin D. ; Spadini, Gianpaolo
Author_Institution :
Intel Corp., Hillsboro
Abstract :
Phase change memory (PCM) research has largely focused on bulk properties to evaluate cell efficiency. Now both electrical and thermal interface resistances are characterized and shown to be critical for understanding power in a novel damascene-GST cell. Interfaces reduce reset power 20% and reset current 40% and allow reset current to scale faster than it would without interfaces.
Keywords :
antimony compounds; germanium compounds; semiconductor storage; GeSbTe; damascene-GST cell; electrical interface resistance; phase-change memory; thermal interface resistance; Conductivity; Contacts; Crystallization; Educational institutions; Electric resistance; Electrodes; Etching; Phase change materials; Phase change memory; Thermal resistance;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418936
