Title :
Degradation of MNOS Memory Transistor Characteristics and Failure Mechanism Model
Author :
Woods, Murray H. ; Tuska, James W.
Author_Institution :
RCA Laboratories, David Sarnoff Research Center, Princeton, New Jersey 08540
Abstract :
The MNOS memory transistor has been observed to exhibit a negative shift of the threshold states and a loss of memory retention time after a large number of alternating polarity writing pulses. Oxide breakdown and the resulting creation of fast oxide surface states are correlated with the degradation of the memory performance of the device.
Keywords :
Degradation; Electrons; FETs; Failure analysis; Insulation; MOS capacitors; MOSFETs; Space vector pulse width modulation; Threshold voltage; Writing;
Conference_Titel :
Reliability Physics Symposium, 1972. 10th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1972.362539
