DocumentCode :
2603206
Title :
Process Technology - Gate Stack Process I - Fundamental Aspects
Author :
Chin, Albert ; De Gendt, Stefan
Author_Institution :
National Chiao Tung University
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
327
Lastpage :
327
Keywords :
CMOS process; CMOS technology; Crystal microstructure; Crystalline materials; Crystallization; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Technological innovation; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4418937
Filename :
4418937
Link To Document :
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