Tuning PMOS Mo(O,N) metal gates to NMOS by addition of DyO capping layer

Author

Petry, J. ; Singanamalla, R. ; Xiong, K. ; Ravit, C. ; Simoen, Eddy ; O´Connor, R. ; Veloso, A. ; Adelmann, C. ; Van Elshocht, S. ; Paraschiv, V. ; Brus, S. ; Van Berkum, J. ; Kubicek, S. ; De Meyer, K. ; Biesemans, S. ; Hooker, J.C.

Author_Institution

NXP, Leuven

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

329

Lastpage

332

Abstract

Abstract MoON has been reported to be a good PMOS candidate. In this paper, we report tuning of the MoON PMOS metal towards Si conduction band-edge with V_tau as low as 0.35V for SiON capped with DyO, using a standard high temperature gate first process flow. Consistent shifts of 450 mV in V_FB and V_tau are observed by capping SiON with DyO for MoON gate. Gate leakage as low as 10^-7 A/cm² at 17.6A EOT is obtained, outperforming HfSiON by 3 orders of magnitude. Intermixing of SiON and DyO is shown to be the key element leading to low EOT and low gate leakage without any degradation of the gate oxide integrity.

Keywords

MOSFET; dysprosium compounds; molybdenum compounds; silicon compounds; DyO; EOT; MoON; MoON PMOS metal; NMOSFET; SiON; equivalent oxide thickness; gate leakage; gate oxide integrity; high temperature gate first process flow; silicon conduction band-edge; voltage 450 mV; Annealing; Atherosclerosis; Atomic layer deposition; Dielectrics; Electrodes; Gate leakage; Hafnium; MOS devices; Moon; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4418938

Filename

4418938