Title :
Tuning PMOS Mo(O,N) metal gates to NMOS by addition of DyO capping layer
Author :
Petry, J. ; Singanamalla, R. ; Xiong, K. ; Ravit, C. ; Simoen, Eddy ; O´Connor, R. ; Veloso, A. ; Adelmann, C. ; Van Elshocht, S. ; Paraschiv, V. ; Brus, S. ; Van Berkum, J. ; Kubicek, S. ; De Meyer, K. ; Biesemans, S. ; Hooker, J.C.
Author_Institution :
NXP, Leuven
Abstract :
Abstract MoON has been reported to be a good PMOS candidate. In this paper, we report tuning of the MoON PMOS metal towards Si conduction band-edge with Vtau as low as 0.35V for SiON capped with DyO, using a standard high temperature gate first process flow. Consistent shifts of 450 mV in VFB and Vtau are observed by capping SiON with DyO for MoON gate. Gate leakage as low as 10-7 A/cm2 at 17.6A EOT is obtained, outperforming HfSiON by 3 orders of magnitude. Intermixing of SiON and DyO is shown to be the key element leading to low EOT and low gate leakage without any degradation of the gate oxide integrity.
Keywords :
MOSFET; dysprosium compounds; molybdenum compounds; silicon compounds; DyO; EOT; MoON; MoON PMOS metal; NMOSFET; SiON; equivalent oxide thickness; gate leakage; gate oxide integrity; high temperature gate first process flow; silicon conduction band-edge; voltage 450 mV; Annealing; Atherosclerosis; Atomic layer deposition; Dielectrics; Electrodes; Gate leakage; Hafnium; MOS devices; Moon; Tin;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418938
