• DocumentCode
    2603272
  • Title

    Mechanism of Vfb roll-off with High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function

  • Author

    Song, S.C. ; Park, C.S. ; Price, J. ; Burham, C. ; Choi, R. ; Wen, H.C. ; Choi, K. ; Tseng, H.-H. ; Lee, B.H. ; Jammy, R.

  • Author_Institution
    SEMATECH, Austin
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    337
  • Lastpage
    340
  • Abstract
    Vfb roll-off phenomena in high work function (WF) metal gate on high-k is successfully explained by progressive oxygen vacancy (Vo +) generation in high-k as bottom oxide scales. Based on this understanding, low temperature O incorporation (LTOI) process has been developed, which reduces PMOS Vt significantly by enriching high-k with O without increasing equivalent oxide thickness (EOT).
  • Keywords
    MOSFET; dielectric materials; electric potential; high-k dielectric thin films; ion implantation; oxygen; work function; O; PMOS band edge work function; equivalent oxide thickness; high work function metal gate MOSFET; high-k dielectrics; low temperature oxygen incorporation; oxygen vacancy generation; roll-off phenomena; Annealing; Capacitors; Electrons; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Oxidation; Temperature; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4418940
  • Filename
    4418940
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2603272