Title :
Clarification of Additional Mobility Components associated with TaC and TiN Metal Gates in scaled HfSiON MOSFETs down to sub-1.0nm EOT
Author :
Tatsumura, Kosuke ; Goto, Misako ; Kawanaka, S. ; Nakajima, Kensuke
Author_Institution :
Toshiba Corp., Yokohama
Abstract :
To clarify mobility (mu) limiting factors in aggressively scaled metal gate (MG)/high-k insulator (HK) MOSFETs, additional mu components associated with TaC and TiN MGs and their physical origins are investigated. With a TaC/HfSiON stack, mu@Eeff=1M V/cm of 215 cm2/Vs, 87% of Poly Si/SiO2 universal, at EOT of 0.91nm is achieved. Two different types of additional scattering are, for the first time, identified; the one is remote Coulomb scattering (RCS) by the charges near the HK-IL interface, induced by diffused metals, and the other becomes obvious near sub-1.0 nm-EOT region, plausibly originating from defects near the MG-HK interface.
Keywords :
MOSFET; carrier mobility; hafnium compounds; high-k dielectric thin films; silicon compounds; tantalum compounds; titanium compounds; EOT; TaC-HfSiON; TiN-HfSiON; additional mobility component; diffused metals; high-k insulator; metal gates; remote Coulomb scattering; scaled MOSFET; size 1 nm; Degradation; High K dielectric materials; High-K gate dielectrics; MOSFETs; Metal-insulator structures; Plasma temperature; Scattering; Semiconductor device manufacture; Temperature measurement; Tin;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418943
