DocumentCode :
2603410
Title :
High Temperature Reverse Bias Testing at Wafer Level
Author :
Ebel, G.H.
Author_Institution :
Singer Kearfott Division, Little Fa´´lls, New Jersey
fYear :
1972
fDate :
26390
Firstpage :
204
Lastpage :
207
Abstract :
The complex hybrids being developed today probably will be a critical reliability problem if a better method of screening semiconductors prior to assembly into the hybrid is not developed. This paper outlines an approach that is presently under development which appears to hold a great deal of promise. It allows for an all gold interconnect system, improves the yield by using burned in chips, and makes the semiconductor and interconnect system less dependent on good, hermetic packages. It appears that burning in and screening at wafer level is a cost effective method of improving the reliability of complex hybrids.
Keywords :
Assembly; Capacitors; Hybrid integrated circuits; Integrated circuit interconnections; Integrated circuit packaging; Integrated circuit reliability; Microassembly; Resistors; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1972. 10th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1972.362553
Filename :
4207925
Link To Document :
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