• DocumentCode
    2603410
  • Title

    High Temperature Reverse Bias Testing at Wafer Level

  • Author

    Ebel, G.H.

  • Author_Institution
    Singer Kearfott Division, Little Fa´´lls, New Jersey
  • fYear
    1972
  • fDate
    26390
  • Firstpage
    204
  • Lastpage
    207
  • Abstract
    The complex hybrids being developed today probably will be a critical reliability problem if a better method of screening semiconductors prior to assembly into the hybrid is not developed. This paper outlines an approach that is presently under development which appears to hold a great deal of promise. It allows for an all gold interconnect system, improves the yield by using burned in chips, and makes the semiconductor and interconnect system less dependent on good, hermetic packages. It appears that burning in and screening at wafer level is a cost effective method of improving the reliability of complex hybrids.
  • Keywords
    Assembly; Capacitors; Hybrid integrated circuits; Integrated circuit interconnections; Integrated circuit packaging; Integrated circuit reliability; Microassembly; Resistors; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1972. 10th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1972.362553
  • Filename
    4207925