DocumentCode :
2603451
Title :
Quantum, Power, and Compound Semiconductors - Reliability and Characterization Of Power HEMTs
Author :
Kizilyalli, Isik C. ; Chen, Kevin J.
Author_Institution :
Nitronex Corpotation
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
379
Lastpage :
379
Keywords :
Aluminum gallium nitride; Degradation; Failure analysis; Gallium nitride; HEMTs; MODFETs; Plasma immersion ion implantation; Plasma sources; Semiconductor device reliability; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4418951
Filename :
4418951
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2603451
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