• DocumentCode
    2603472
  • Title

    A review of failure modes and mechanisms of GaN-based HEMTs

  • Author

    Zanoni, Enrico ; Meneghesso, Gaudenzio ; Verzellesi, Giovanni ; Danesin, Francesca ; Meneghini, Matteo ; Rampazzo, Fabiana ; Tazzoli, Augusto ; Zanon, Franco

  • Author_Institution
    Univ. di Padova, Padova
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    381
  • Lastpage
    384
  • Abstract
    Failure modes and mechanisms of AlGaN/GaN HEMTs, observed during accelerated tests at various bias conditions are reviewed.
  • Keywords
    aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device reliability; wide band gap semiconductors; AlGaN; failure modes; high electron mobility transistors; semiconductor device reliability; Aluminum gallium nitride; Capacitance; Electroluminescence; Gallium nitride; HEMTs; Life estimation; MODFETs; Passivation; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4418952
  • Filename
    4418952
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2603472