Title :
Reliability of Enhancement-mode AlGaN/GaN HEMTs Fabricated by Fluorine Plasma Treatment
Author :
Yi, Congwen ; Wang, Ruonan ; Huang, Wei ; Tang, Wilson C -W ; Lau, K.M. ; Chen, Kevin J.
Author_Institution :
Hong Kong Univ. of Sci. & Technol., Hong Kong
Abstract :
The reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by the fluorine plasma treatment technique was investigated by applying OFF-state and ON- state long-term high-electric-field stress. A moderate negative shift (-0.25 V) was observed in the threshold voltage after 288 hours of stress. This shift, however, can be eliminated with an enhancement/depletion dual-gate configuration which effectively prevents high electric field from influencing the fluorine plasma treated area.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; plasma materials processing; AlGaN-GaN; HEMT fabrication; enhancement-depletion dual-gate configuration; fluorine plasma treatment; high-electric-field stress; negative shift; reliability; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Plasma devices; Plasma sources; Plasma stability; Plasma temperature; Thermal stresses; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418954
