DocumentCode
2603515
Title
Fault detection for plasma-enhanced chemical vapor deposition process using feature extraction
Author
Chang, Yaw-Jen
Author_Institution
Dept. of Mech. Eng., Chung Yuan Christian Univ., Chungli, Taiwan
fYear
2012
fDate
20-24 Aug. 2012
Firstpage
491
Lastpage
496
Abstract
This paper presents a simple fault detection approach for plasma-enhanced chemical vapor deposition (PECVD) process by feature neurons. PECVD using the RF-induced plasma to create and sustain CVD reaction is an important process for the deposition of amorphous silicon and silicon nitride in the construction of TFT layers. Stable RF power is the basic requirement and any malfunction on RF power is possible to cause the incomplete deposition of thin film and, in addition, to affect the next production in sequence. In this study, delivery power is the main parameter investigated. Kohonen network is used to construct the feature neurons to draw out the signal characteristics of delivery power. Incorporating with the fuzzy c-mean algorithm and ellipsoidal calculus, this approach establishes the ellipsoidal threshold limits and can extract the process drifts and abnormal deviations in the process characteristics by limit checking. This fault detection system was implemented to check both the normal and fault-induced delivery powers and precisely discovered the equipment malfunctions.
Keywords
amorphous semiconductors; elemental semiconductors; fault location; feature extraction; flaw detection; fuzzy set theory; plasma CVD; production engineering computing; self-organising feature maps; semiconductor device manufacture; semiconductor industry; silicon; silicon compounds; thin film transistors; CVD reaction; Kohonen network; PECVD; RF-induced plasma; Si; TFT layers; amorphous silicon deposition; ellipsoidal calculus; ellipsoidal threshold limits; equipment malfunctions; fault detection system; fault-induced delivery powers; feature extraction; feature neurons; fuzzy c-mean algorithm; incomplete thin film deposition; limit checking; normal delivery powers; plasma-enhanced chemical vapor deposition process; process drift extraction; silicon nitride deposition; stable RF power; Fault detection; Feature extraction; Generators; Inductors; Neurons; Plasmas; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Automation Science and Engineering (CASE), 2012 IEEE International Conference on
Conference_Location
Seoul
ISSN
2161-8070
Print_ISBN
978-1-4673-0429-0
Type
conf
DOI
10.1109/CoASE.2012.6386497
Filename
6386497
Link To Document